Method for controlling re-writing operation for memory cell in semiconductor integrated circuit, semiconductor integrated circuit, semiconductor device equpped with many of the semiconductor integrated circuits, and electronic apparatus using the semiconductor device

摘要

A semiconductor integrated circuit is provided wherein, when a sense amplifier 3 detects H data, the potential on a plate line PL switches from the power supply potential VDD to the GND potential. In other words, the timing at which the potential on the plate line is shifted from the power supply potential VDD to the GND potential is set immediately after the sense amplifier reads data. As a result, the start timing for a re-writing operation can be quickened.