| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing a thin film on a substrate in a process chamber. SOLUTION: In the method, a layer of fluorinated silicate glass(FSG) is deposited on a substrate by a high-density plasma, which is generated from silicon containing, oxygen containing and fluorine containing gases. The substrate is biased at a bias power density of 1.3 watts per square centimeter or less during deposition of the FSG layer. In a specific embodiment, the substrate is biased at a power level of 0.0 w/cm2 (and thus is not biased at all) and in some embodiments, the plasma generating system applies a total source power to the plasma of about 20.7 watts per square centimeter or greater. In a preferred embodiment, the gases flow to the chamber such that a ratio of a flow rate of the fluorine containing gas to a combined flow rate of the silicon containing and fluorine containing gases is less than about 0.55. Furthermore, in the preferred embodiment, a flow rate of the oxygen containing gas to the combined flow rates of the silicon containing and fluorine containing gases is greater than about 1.5.
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