| 摘要 |
PURPOSE: An apparatus for collecting impurities on a silicon wafer is provided to effectively collect metals having a high reduction potential, by irradiating ultraviolet rays to a chemical drop which collects the impurities on the silicon wafer to generate ozone. CONSTITUTION: The chemical drop is hung to a holder(10), formed of a penetration type. A robot arm(20) moves the holder and makes the chemical drop scan the surface of the silicon wafer. An ultraviolet ray irradiating unit(30) irradiates ultraviolet rays to the chemical drop when the chemical drop scans the surface of the silicon wafer.
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