| 摘要 |
<p>PURPOSE:To provide a method for adjusting a phase shift difference which produces a phase shift photomask having the desired phase shift difference. CONSTITUTION:The substrate in apertures 5 is etched in order to compensate the phase shift difference of a deficient-component if the film thickness of phase shift films 3, 13 of phase shift photomasks 1, 11 formed with circuit patterns is insufficient. The phase shift films of phase shift parts 16 are etched if the film thickness is excessive. The phase shift photomask 11 having the target phase shift difference is thus obtd. The phase shift parts are protected by a positive resist and the apertures 15 by a negative resist if the positive resist or negative resist is applied thereon at the time of etching and is previously exposed and developed. The parts for which the etching is not required are thus protected.</p> |
