发明名称 Substrate processing method
摘要 After a first processing solution is spread over the front surface of a substrate and the temperature of the front surface of the substrate is regulated at a predetermined substrate temperature, a second processing solution is spread over the front surface of the substrate. The second processing solution can be spread while the front surface temperature of the substrate is maintained at the predetermined substrate temperature. Hence, a layer insulating film with good adhesion properties can be formed uniformly on the front surface of the substrate, and the quantity of the processing solution to be used can be reduced.
申请公布号 US2002045011(A1) 申请公布日期 2002.04.18
申请号 US20010025453 申请日期 2001.12.26
申请人 NAGASHIMA SHINJI 发明人 NAGASHIMA SHINJI
分类号 H01L21/027;G03F7/16;H01L21/00;H01L21/312;H01L21/3213;(IPC1-7):B05D3/02;B05D3/12;B05D1/36 主分类号 H01L21/027
代理机构 代理人
主权项
地址