| 摘要 |
PURPOSE: To provide a protection circuit which can improve electrostatic resistance of a semiconductor circuit. CONSTITUTION: This circuit comprises a power supply terminal TV where a power supply potential Vcc is supplied, a ground terminal TG where a ground potential GND is supplied, a p-channel MOS transistor P1 where a gate, a source, a back gate are connected to the power supply terminal TV, a p-channel MOS transistor P2 where the source is connected to the drain of the p-channel MOS transistor P1, the back gate is connected to the power supply terminal TV, and the gate and the drain are connected to the ground terminal TG, an n-channel MOS transistor N1 where the gate, the source, the back gate are connected to the ground terminal TG, and the p-channel MOS transistor P2 where the source is connected to the drain of the n-channel MOS transistor N1, the back gate is connected to the ground terminal TG, and the gate and the drain are connected to the power supply terminal TV.
|
