| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a surface treatment method which makes the surface of a gallium arsenide semiconductor substrate insoluble or hardly soluble to etchant of gallium arsenide, and to provide a manufacturing method using it. SOLUTION: In the surface treatment method for a gallium arsenide semiconductor in the first invention, the surface of the gallium arsenic semiconductor is brought into contact with nitric or ammonium plasma, so as to form a gallium nitride layer on the surface. This gallium nitride layer becomes insoluble or hardly soluble to the etchant of the gallium arsenic semiconductor. Furthermore, in the manufacturing method for a semiconductor in a second invention, a gold film is formed on a semiconductor substrate where the surface treatment is performed, and patterning is performed in etchant, whereupon only the gold film is etched, and the surface of the gallium arsenide semiconductor substrate is not etched.</p> |
