Fin field effect transistor, semiconductor device and fabricating method thereof

摘要

A substrate is patterned to form trenches and a semiconductor fin between the trenches. Insulators are formed in the trenches and a dielectric layer is formed to cover the semiconductor fin and the insulators. A dummy gate strip is formed on the dielectric layer. Spacers are formed on sidewalls of the dummy gate strip. The dummy gate strip and the dielectric layer underneath are removed until sidewalls of the spacers, a portion of the semiconductor fin and portions of the insulators are exposed. A second dielectric layer is selectively formed to cover the exposed portion of the semiconductor fin, wherein a thickness of the dielectric layer is smaller than a thickness of the second dielectric layer. A gate is formed between the spacers to cover the second dielectric layer, the sidewalls of the spacers and the exposed portions of the insulators.

主权项

1. A method for fabricating a fin field effect transistor (FinFET), comprising:
patterning a substrate to form a plurality of trenches in the substrate and a semiconductor fin between the trenches; forming a plurality of insulators in the trenches; forming a dielectric layer to cover the semiconductor fin and the insulators; forming a dummy gate strip on the dielectric layer, a lengthwise direction of the dummy gate strip being different from a lengthwise direction of the semiconductor fin; forming a pair of spacers on sidewalls of the dummy gate strip; removing the dummy gate strip and thinning the dielectric layer underneath to form a thinned portion between the pair of spacers; and forming a gate between the pair of spacers to cover the thinned portion and sidewalls of the pair of spacers.