SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device provided with storage capacitors having necessary and sufficient capacity. SOLUTION: In a semiconductor device having a substrate which has a metallic surface, the insulator film formed on the substrate having the metallic surface and the pixel part formed on the insulator film, the pixel part has TFTs(thin film transistors) and wirings to be connected to the TFTs and storage capacitors are constituted of the substrate having the metallic surface, the insulator film and the wirings. Since the thinner the film thickness of the insulator film or the larger the area of a region where the insulator film and the wiring are faced, the larger capacity can be obtained in this device, the device is profitable.