发明名称 |
THIN FILM SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form.
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申请公布号 |
US2010171195(A1) |
申请公布日期 |
2010.07.08 |
申请号 |
US20080664232 |
申请日期 |
2008.06.04 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
TOBE SATOSHI;TAKENAKA TAKAO |
分类号 |
H01L25/065;H01L21/50;H01L21/822;H01L29/02 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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