| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor whose productivity and cost are improved without using a special photolithography process only for preparing an n<+> region and an n<-> region separately by effectively forming an LDD structure at precision of the same level as a conventional method. SOLUTION: After a semiconductor thin film 3, a gate insulation film 4 and a gate electrode 5 are formed in this order on a substrate 1, n-type ionic species is implanted to the semiconductor thin film 3 at a low dose, and thereafter the gate insulation film 4 and the gate electrode 5 are covered with a layer insulation film 23. Then, after an opening part 24 is formed by selectively removing a part of the gate insulation film 4 on. the semiconductor thin film 3 and a part of the layer insulation film 23, n-type ionic species is implanted at a high dose from the opening part 24. A thin film transistor is manufactured in this way.</p> |
