| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor which can shorten the recovery time of a photodiode, and suppress the surge voltage and oscillation at the recovery. SOLUTION: A P-base region 5 is formed on an n drift layer of a semiconductor substrate, and an n source region 6 is formed at the surface layer part in the p region area 5. A gate electrode 9 is arranged in partial region of the p base area 5 and a partial area of the n source region 6 across a gate insulating film 8 and the partial region of the p base region 5 and the partial region 5 of the n source region 6 are in contact with a source electrode 11. A cluster containing layer 3 is embedded in drift layers (2, 4) below the p base region 5, so that a portion of the drift layer (2) is left underneath it. |
