| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a bit line of a semiconductor device capable of easily manufacturing the bit line having a width of a fine line of 0.1μm or less. SOLUTION: The method for forming the bit line of the semiconductor device comprises a first step of sequentially forming a bit line forming conductive layer (202) and an insulating layer (204) on a substrate (200), a second step of forming a first mask pattern (208) exposed at a predetermined region on the layer (204), a third step of forming a second mask pattern (209) by etching the first mask pattern (208), a fourth step of removing a part not covered with the pattern (209) of the layer (204), a fifth step of removing the second mask pattern (209), and a step of forming the bit line (203) by removing the layer (202) not covered with the layer (205) retained after the fourth step.
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