SILICON WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer manufacturing method in which crystal defects such as COP (crystal originated particle) in a semiconductor device formation region and oxygen precipitation are reduced and the occurrence of slip dislocation at the time of a heat treatment in a device formation process can be inhibited.SOLUTION: A silicon wafer manufacturing method comprises: a step S2 of performing a heat treatment in an oxidized gas atmosphere on a material silicon wafer which is sliced from a silicon single crystal ingot grown by a Czochralski method by setting the highest achieving temperature at 1300-1380°C; a step S3 of peeling an oxide film on a surface of the heat-treated silicon wafer; and a step S4 of performing a heat treatment on the peeled silicon wafer obtained in the previous step in a non-oxidized gas atmosphere by setting the highest achieving temperature at 1200-1380°C and a rate of temperature increase at 1-150°C/sec in such a manner that the maximum value of an oxygen concentration in a range from a surface of the obtained silicon wafer to a depth of 7 μm becomes equal to or less than 1.3×10atoms/cm.SELECTED DRAWING: Figure 1