| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an active matrix display device having a novel structure of an LDD region. <P>SOLUTION: The active matrix display device comprises at least one thin film transistor having a substrate, a plurality of source lines superposed on the substrate, a plurality of gate lines disposed crosswise with the plurality of the source line superposed with the substrate, a plurality of pixel electrodes arranged in a matrix state and superposed on the substrate, a channel region, a source/drain region connected to the plurality of the pixel electrodes, a gate insulating film adjacent to the channel region, and a gate electrode adjacent to the gate insulating film, a holding capacity connected to the thin film transistor and having a capacity insulating film and at least first electrode, second electrode via the capacity insulating film in such a manner that the first electrode is formed of the same semiconductor material as the channel region, the TFT has at least one LDD region and the end of the gate electrode coincides with the end of the LDD region. <P>COPYRIGHT: (C)2003,JPO</p> |
