| 摘要 |
PROBLEM TO BE SOLVED: To provide a high breakdown voltage MOS transistor structure. SOLUTION: A semiconductor device is provided with an element separating film 3 formed on a semiconductor substrate 1, a gate insulating film 4 formed on the substrate 1 at a portion where the film 3 is not formed, and a gate electrode 5 formed in an annular shape along the peripheral section of a low- concentration drain region 6 on the gate insulating film 4. The device is also provided with a high-concentration source region 7A formed adjacent to the gate electrode 5 and a high-concentration drain region 7B formed in the low- concentration drain region 6. COPYRIGHT: (C)2003,JPO
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