发明名称 GAS HUMIDITY SENSOR
摘要 FIELD: gas analysis, registration and measurement of content of water vapors. SUBSTANCE: semiconductor gas humidity sensor has semiconductor base with metal electrodes deposited on it. Base is made of monocrystalline plate of indium phosphide. EFFECT: raised sensitivity of sensor and its adaptability to manufacture. 2 dwg
申请公布号 RU2212656(C1) 申请公布日期 2003.09.20
申请号 RU20020105792 申请日期 2002.03.04
申请人 OMSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET 发明人 KIROVSKAJA I.A.
分类号 G01N27/12 主分类号 G01N27/12
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