| 摘要 |
PURPOSE: A method for fabricating a damascene pattern of a semiconductor device is provided to prevent a resist poisoning phenomenon and vary a dual damascene process by preventing the ammonia existing in a material of a low dielectric constant from being diffused to resist. CONSTITUTION: A via pattern(110a) is formed on a semiconductor substrate(100). A bottom anti-reflective coating(BARC)(130) including acid is formed on the via pattern. A trench pattern(140) is formed on the BARC. The acid is sulfonic acid or inorganic acid. The acid is 0.01-1 percent.
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