METHOD FOR PLANARIZING SURFACE OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED THEREBY

摘要

PURPOSE: A method for planarizing the surface of a semiconductor device is provided to effectively control a dishing phenomenon in a recessed region in a surface planarization process performed by a chemical mechanical process(CMP) even if the width of the recessed region is broad, by introducing a medium material layer with a high polishing removal rate as compared with a buried material layer filled in the recessed region like a trench region and by using CMP slurry that makes the difference between the removal rates large. CONSTITUTION: The recessed region is formed on a base material layer by using an etch barrier layer pattern formed on the base material layer. The medium material layer is formed on the etch barrier layer pattern. A buried material layer that has a high polishing removal rate as compared with the medium material layer in a CMP process is formed to fill the recessed region and protrude to the medium material layer by a predetermined height. The buried material layer is eliminated by a CMP process until the surface of the medium material layer is exposed. The medium material layer and the buried material layer are planarized by a CMP process until the surface of the etch barrier layer pattern is exposed.