METHOD FOR FORMING GATE ELECTRODE

摘要

PURPOSE: A method for forming a gate electrode is provided to improve yield and an electrical characteristic of a semiconductor device by effectively eliminating defects generated in a process for etching the gate electrode. CONSTITUTION: A polycrystalline silicon layer, a tungsten silicide layer and a hard mask nitride layer are sequentially formed on a semiconductor substrate(1). The layers are etched to form the gate electrode(G). Chemicals including O and N components are supplied to the resultant substrate to perform a cleaning process. A thermal oxide process is performed on the cleaned substrate.