| 摘要 |
PURPOSE: An atomic deposition apparatus having a source supply apparatus and a method for depositing an atomic layer using the same are provided to form uniformly an oxide layer such as BST, STO, and Ta2O5 by supplying uniformly a source gas. CONSTITUTION: A radiate type source gas supply portion(60) is located at a center of a ceiling(30b) of a chamber(30). A source gas is supplied to an upper portion of a wafer(50) through the radiate type source gas supply portion. The radiate type source gas supply portion is formed with a source gas inflow portion, a pressure forming portion, a source gas emission portion, and a plurality of emission holes. The emission holes of the source gas emission portion are directed to the wafer. A pumping port(70) is formed at a bottom(30a) of the chamber around a wafer chuck(40).
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