发明名称 MASK, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask with which halftone exposure is successfully carried out without being affected by the resolution threshold of an exposing device and an exposure method. <P>SOLUTION: A pattern 2 which is formed on the mask M and has shielding sections 6 for shielding exposure light and transmission sections 7 transmitting the exposure light is exposed onto a photosensitive substrate. At this time, the pattern 2 has repeating regions 5 where the transmission sections 7 with respect to the shielding sections 6 are repeated at a prescribed pitch D. The pattern 2 of the mask M is exposed dividedly several times by shifting the mask M relative to the photosensitive substrate by as much as the pitch D to the direction X where the transmission sections are repeated. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004233861(A) 申请公布日期 2004.08.19
申请号 JP20030024655 申请日期 2003.01.31
申请人 NIKON CORP 发明人 HARADA KEIKAI;SHIRASU HIROSHI;NARA KEI;MURAKAMI MASAKAZU
分类号 G03F1/00;G03F1/68;G03F7/22;H01L21/027;H01L21/3205;H01L21/336;H01L21/768;H01L29/786;(IPC1-7):G03F7/22;G03F1/08;H01L21/320 主分类号 G03F1/00
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