发明名称 |
SEMICONDUCTOR MEMORY DEVICE PREVENTING DATA VARIATION DUE TO ACCUMULATION OF DISTURB, IN WHICH DATA VARIATION DUE TO DISTURB ACCUMULATION IS PREVENTED |
摘要 |
PURPOSE: A semiconductor memory device is provided to prevent data variation due to disturb accumulation, as suppressing the increase of the number of rewriting of a sector. CONSTITUTION: According to a data rewriting device, a logic/physical sector conversion unit(21) performs conversion from a logic sector to a physical sector. A refresh zone detection unit(22) detects one block or a plurality of blocks to be refreshed. A refresh execution unit(23) executes refresh as to a sector included in a refresh zone. And a data updating unit(24) performs data updating of a target sector.
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申请公布号 |
KR20040077423(A) |
申请公布日期 |
2004.09.04 |
申请号 |
KR20030075053 |
申请日期 |
2003.10.27 |
申请人 |
RENESAS SOLUTIONS CORPORATION;RENESAS TECHNOLOGY CORP. |
发明人 |
ISHIMOTO SHINICHI |
分类号 |
G06F12/16;G11C11/34;G11C11/406;G11C16/02;G11C16/06;G11C16/34;G11C29/00;(IPC1-7):G11C16/34 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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