SELF-HEATING SEMICONDUCTOR TRANSISTORS

摘要

The present invention provides materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.