| 发明名称 |
THIN FILM RESISTANCE MATERIAL, RESISTOR USING SAME, AND METHOD OF MANUFACTURING RESISTOR |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-quality and stable thin film resistance material, a resistor using it, and a method of manufacturing the resistor. <P>SOLUTION: The resistor is constituted by forming the thin film resistance material with a desired pattern on one surface of a substrate made of an insulator. The thin film resistance material comprises: a conductive compound being the compound of a conductive nitride and an insulation nitride and having NaCl-type crystal structure; and inevitable impurity. The conductive compound comprises: Ti<SB>x</SB>Al<SB>1-x</SB>N a conductive compound being the compound of TiN being the conductive nitride and having the NaCl-type crystal structure and AlN being the insulation nitride and having the NaCl-type crystal structure; and the innevitable impurity. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2004288981(A) |
申请公布日期 |
2004.10.14 |
| 申请号 |
JP20030080798 |
申请日期 |
2003.03.24 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
NISHIYAMA AKIO;TAKAOKA HIDEMITSU |
| 分类号 |
H01C17/06;H01C7/00;(IPC1-7):H01C7/00 |
主分类号 |
H01C17/06 |
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