| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can be made minute easily and can perform simultaneously read and write. <P>SOLUTION: This device has a control logic circuit 218 generating read selection signals RSEL 0-5 and a write selection signals WSEL 0-5 which select one plane for read and write out of a plurality of planes 201-6 in which memory elements are arranged in an array type, address selection circuits 301-6 arranged at each plane, and an address buffer 220 providing write and read addresses simultaneously, each address selecting circuit is constituted so as to receive each one of read and write signals from the control logic circuits, the memory element comprises a gate electrode formed on a semiconductor layer through a gate insulation film, a channel region arranged under the gate electrode, a diffusion region arranged at both sides of the channel region and having a channel region and a reverse conduction type, and a memory function object having a function holding electric charges formed at the both sides of the gate electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
