| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with the noise effect reduced. <P>SOLUTION: In the uppermost layer of a substrate including multilayer interconnection, i.e. a plurality of layers that are laminated via interlayer insulating films respectively and wirings formed in the respective layers, with a metal member formed in a region other than the region in which wirings are arranged, the metal member is electrically connected to a node, to which a prescribed electric potential is applied. This enables reduction the possibility of an electronic circuit being affected from noises, without significantly increasing the number of steps or increasing the thickness of a semiconductor device. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
