发明名称 METHOD OF FORMING ANTENNA TEST PATTERN FOR MONITORING PLASMA DAMAGE BY ADJUSTING ANTENNA RATIO
摘要 PURPOSE: A method of forming an antenna test pattern for monitoring plasma damage is provided to form various antenna test patterns by adjusting an antenna ratio according to a variation of an area of a gate electrode. CONSTITUTION: A gate oxide layer is deposited on an active region of a wafer. A gate poly(202) is deposited on the gate oxide layer. A gate electrode is formed by patterning the gate poly according to an antenna ratio. An interlayer dielectric is formed by depositing an oxide layer on the gate electrode. A contact hole is formed on the interlayer dielectric in order to form a metal electrode. The metal electrode is formed according to a pre-designed antenna test pattern on the interlayer dielectric having the contact hole.
申请公布号 KR20050014106(A) 申请公布日期 2005.02.07
申请号 KR20030052578 申请日期 2003.07.30
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KWON, YOUNG MIN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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