发明名称 |
METHOD OF FORMING ANTENNA TEST PATTERN FOR MONITORING PLASMA DAMAGE BY ADJUSTING ANTENNA RATIO |
摘要 |
PURPOSE: A method of forming an antenna test pattern for monitoring plasma damage is provided to form various antenna test patterns by adjusting an antenna ratio according to a variation of an area of a gate electrode. CONSTITUTION: A gate oxide layer is deposited on an active region of a wafer. A gate poly(202) is deposited on the gate oxide layer. A gate electrode is formed by patterning the gate poly according to an antenna ratio. An interlayer dielectric is formed by depositing an oxide layer on the gate electrode. A contact hole is formed on the interlayer dielectric in order to form a metal electrode. The metal electrode is formed according to a pre-designed antenna test pattern on the interlayer dielectric having the contact hole.
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申请公布号 |
KR20050014106(A) |
申请公布日期 |
2005.02.07 |
申请号 |
KR20030052578 |
申请日期 |
2003.07.30 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KWON, YOUNG MIN |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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