发明名称 |
Method of forming interconnect structure with low dielectric constant |
摘要 |
The present invention provides a method for forming low dielectric constant inter-metal dielectric layer. The method includes providing a semiconductor substrate and forming a first dielectric layer on the semiconductor substrate. Conductor structures are formed in the first dielectric layer. The partial first dielectric layer is removed by using the conductor structures as etching mask. A second dielectric layer is formed between the conductor structures, which has a dielectric constant smaller than the first dielectric layer. The second dielectric layer also alternatively has air voids contained therein to reduce dielectric constant.
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申请公布号 |
US6905938(B2) |
申请公布日期 |
2005.06.14 |
申请号 |
US20020315128 |
申请日期 |
2002.12.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
YANG MING-SHENG;LIU CHIH-CHIEN |
分类号 |
H01L21/316;H01L21/318;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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