发明名称 PLASMA TREATMENT DEVICE AND PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment device in which substitution of gas can be carried out within a very short period of time. <P>SOLUTION: This plasma treatment device is equipped with a gas supplying means to supply desired gas to a plasma generating space 16 that is under a pressure near the atmospheric pressure, three or more electrodes 5a, 5b, 5c in order to generate the plasma 8 in the plasma generating space 16, a power source 6 for impressing voltages on one or more voltage impressing target electrodes selected from the three or more electrodes in order to generate the plasma 8 in the plasma generating space 16, and a switching circuit 7 as a switching means of voltage impressing state in order to switch selection of the voltage impressing target electrode so that a first generating region and a second generating region will be switched wherein regions in which the plasma 8 is generated in the plasma generating space 16 are different from each other. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006019067(A) 申请公布日期 2006.01.19
申请号 JP20040193607 申请日期 2004.06.30
申请人 SHARP CORP 发明人 NISHIKAWA KAZUHIRO
分类号 H05H1/24;C23C16/509;H01L21/205;H01L21/3065 主分类号 H05H1/24
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