| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a stable and clean film on a substrate to be treated while inhibiting the formation of particles, by preventing a plurality of gases from mixing in a gas-feeding passage, when forming the film with the use of a plurality of the gases. <P>SOLUTION: The method for forming the film containing a metal on the substrate to be treated through supplying a first clean gas containing the metal and a second clean gas for reducing the first clean gas, into a treatment vessel having a pedestal for holding the substrate inside it comprises: the first step of supplying the first clean gas from the first gas-feeding passage to the treatment vessel; and the second step of supplying the second clean gas from the second gas-feeding passage to the treatment vessel, and plasma-exciting the second clean gas with a plasma-exciting means installed in the treatment vessel, wherein in the second step, a backflow preventing gas of H<SB>2</SB>or He is supplied to the treatment vessel from the first gas-feeding passage. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
