| 摘要 |
The simulation method is for simulating a pattern to be transferred onto a photoresist film by exposure using a photomask with a main pattern 10 and an assist pattern 12 formed on. The simulation is made, using data given by adding a bias value to a design dimension of the assist pattern as data of a dimension of the assist pattern. The simulation is made, using data given by adding a bias value to a design dimension of the assist pattern as data of a dimension of the assist pattern. The simulation can be made with high accuracy, and the fitting error can be made very small.
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