Method of manufacturing semiconductor device that uses treatment to enhance hydrophilicity of spin coated insulating film

摘要

To provide a semiconductor device having improved reliability. After formation of a first insulating film for an interlayer insulating film by spin coating, the surface of the first insulating film is subjected to a hydrophilicity improving treatment. A second insulating film for the interlayer insulating film is then formed on the first insulating film by spin coating. The interlayer insulating film is comprised of a stacked insulating film including the first insulating film and the second insulating film thereon. The interlayer insulating film therefore can have improved surface flatness.

主权项

1. A method of manufacturing a semiconductor device having a first interlayer insulating film formed over a semiconductor substrate, comprising the steps of:
(a1) forming a third insulating film by CVD, (a) forming a first insulating film over the third insulating film by spin coating; (b) subjecting a surface of the first insulating film to an oxygen plasma treatment performed at a temperature of 170° C. or less; and (c) after the step (b), forming a second insulating film over the first insulating film by spin coating, wherein the first interlayer insulating film has a stacked insulating film including the third insulating film, the first insulating film, and the second insulating film.