| 发明名称 |
METHOD AND DEVICE FOR METAL GATE STACKS |
| 摘要 |
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, a high-k dielectric layer on the substrate, a capping layer on the high-k dielectric layer, forming a first N-type work function metal layer on the capping layer, forming a second N-type work function metal layer on the first N-type work function metal layer, and forming a metal electrode layer on the second N-type work function metal layer. The second N-type work function metal layer has a Ti/Al atomic ratio greater than the Ti/Al atomic ratio of the first N-type work function metal layer. The second work function metal layer having a higher Ti/Al atomic ratio will not absorb appreciable oxygen from the atmosphere, so that oxygen will not be available to the first work function metal layer, thereby reducing the oxidation level of the first work function metal layer. |
| 申请公布号 |
US2017110553(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615272197 |
申请日期 |
2016.09.21 |
| 申请人 |
Semiconductor Manufacturing International (Beijing) Corporation ;Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
ZHOU Fei |
| 分类号 |
H01L29/49;H01L29/51;H01L27/092;H01L29/40 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device comprising:
providing a substrate structure including a substrate, a high-k dielectric layer on the substrate, a capping layer on the high-k dielectric layer; forming a first N-type work function metal layer on the capping layer; forming a second N-type work function metal layer on the first N-type work function metal layer; the second N-type work function metal layer having a Ti/Al atomic ratio greater than a Ti/Al atomic ratio of the first N-type work function metal layer; and forming a metal electrode layer on the second N-type work function metal layer. |
| 地址 |
Beijing CN |
