| 发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
An electronic device and a method for fabricating the same are provided. An electronic device according to an implementation of the disclosed technology is an electronic device including a semiconductor memory, wherein the semiconductor memory includes: a plurality of first lines extending in a first direction; a plurality of second lines extending in a second direction that intersects with the first direction; a plurality of variable resistance elements disposed between the first lines and the second lines and located at intersections of the first lines and the second lines; and a plug connected to a first portion of each of the first lines, wherein the plug comprises a conductive layer and a material layer having a resistance value higher than that of the conductive layer. |
| 申请公布号 |
US2017110513(A1) |
申请公布日期 |
2017.04.20 |
| 申请号 |
US201615087327 |
申请日期 |
2016.03.31 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Jae-Yeon |
| 分类号 |
H01L27/24;H01L45/00;G11C13/00;G06F12/08;G06F3/06 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:
a plurality of first lines extending in a first direction; a plurality of second lines extending in a second direction that intersects with the first direction; a plurality of variable resistance elements disposed between the first lines and the second lines and located at intersections of the first lines and the second lines; and a plug connected to a first portion of each of the first lines, wherein the plug comprises a conductive layer and a material layer having a resistance value higher than that of the conductive layer. |
| 地址 |
Icheon KR |
