Methods for Forming Semiconductor Devices

摘要

A method for forming a semiconductor device includes etching, in a masked etching process, through a layer stack located on a surface of a semiconductor substrate to expose the semiconductor substrate at unmasked regions of the layer stack. The method further includes etching, in a selective etching process, at least a first layer of the layer stack located adjacently to the semiconductor substrate. A second layer of the layer stack is less etched or non-etched compared to the selective etching of the first layer of the layer stack, such that the first layer of the layer stack is laterally etched back between the semiconductor substrate and the second layer of the layer stack. The method further includes growing semiconductor material on regions of the surface of the semiconductor substrate exposed after the selective etching process.

主权项

1. A method for forming a semiconductor device, the method comprising:
etching, in a masked etching process, through a layer stack located on a surface of a semiconductor substrate to expose the semiconductor substrate at unmasked regions of the layer stack; etching, in a selective etching process, at least a first layer of the layer stack located adjacent to the semiconductor substrate, wherein a second layer of the layer stack is less etched or non-etched compared to the selective etching of the first layer of the layer stack, such that the first layer of the layer stack is laterally etched back between the semiconductor substrate and the second layer of the layer stack; and growing semiconductor material on regions of the surface of the semiconductor substrate exposed after the selective etching process.