| 摘要 |
1303893 Gunn effect devices STANDARD TELEPHONES & CABLES Ltd 19 Aug 1970 39900/70 Heading H1K [Also in Divisions H3 and H4] A modification to the circuit of the Specification 1,126,663 including a body 10 of semiconductor material exhibiting high field instability effects, a current source 12 producing an electric field between contacts 11 less than the instability threshold value and an input signal circuit 14 which in response to an input signal raises the electric field above the instability threshold value for a time shorter than the instability transit time to cause the current through the body to undergo a single excursion from its steady state value consists in the body 10 having a diamond or zinc blende lattice structure with #, L and # energy states. The material may be a Group III-V type semiconductor such as GaSb or a ternary Group III-V alloy such as In x Ga 1-x Sb or a suitable Group II-VI compound. In a modification (Fig. 2, not shown) the input signal is fed to a third electrode (25) insulated such as by a silica layer (26) from the body adjacent a constricted part (27). Variation of the potential of this electrode (25) controls the depth of an associated depletion layer and the local field. The current source 12 may be pulsed. In the transmitter arrangement shown for a communications link, an input signal 15 modulates the frequency of oscillator 14 to produce a train of output pulses from 13. The circuit acts as a pulse amplifier and a similar arrangement to that shown in Fig. 1 may be used at the receiving end of the link. The received frequency modulated signal is applied to the input of the device 10 in place of that from oscillator 14 so that an amplitude modulated output signal is obtained from a filter fed by the output from the device 10. |
