| 摘要 |
PURPOSE:To obtain a diode, whose Zener voltage is stable, by diffusing and forming a region reaching a semiconductor substrate at the center section of an epitaxial layer grown onto the substrate, forming an emitter region with an area wider than the region to the surface of the region and positioning a P-N junction surface into a bulk. CONSTITUTION:An N type layer 32 is grown onto a P type Si substrate 30 in epitaxial form, and the layer 32 is shaped insularly by a P type region 34 reaching the substrate 30 while a P type region 36 similarly reaching the substrate is formed at the central section of the layer 32. An N<+> type emitter region 38, the area thereof is wider than the region 36 and depth thereof is shallower than it, is diffused and shaped while being positioned onto the region 36, the whole surface containing the region 38 is coated with an oxide film 44, and windows are bored and a cathode contact 42K is attached to the region 38 and an anode contact 42A to the region 34. Accordingly, the P-N junction surface formed by the bottom of the emitter rgion 38 and the upper surface of the region 36 is shaped into the bulk, and the Zener diode, noises therefrom are low and Zener voltage thereof is stable, is obtained. |
