| 摘要 |
1404339 Group III-Group V compounds PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 15 Aug 1972 [18 Aug 1971] 37946/72 Heading C1A A method of treating the surface of a semiconductor wafer, e.g. to improve the adherence of a metal to the treated surface, in which at least this region is of P-type conductivity and consists of at least one element from group 3B and at least one element from group 5B of the Mendeleer Periodic Table, comprises immersing the wafer in a liquid metal bath consisting of mercury or gallium removing the wafer from the bath and removing metal withdrawn from the bath on the wafer from the surface of the wafer. The wafer may consist of P-type gallium arsenide which is immersed in liquid gallium at 80-150‹ C. for 5-30 minutes. Residual gallium may be removed by treatment with boiling HCl and subsequent clearing with an organic solvent. A coating metal, e.g. Al, may be deposited on the cleaned region of the wafer. |
