Photovoltaic element and method of manufacturing the same, and solar battery module

摘要

A back contact heterojunction photoelectric conversion device, that obtain junctions that are nearly ohmic contacts by integrally forming a transparent conductive film including an electrode directly on a p-type amorphous silicon film and a transparent conductive oxide directly on an n-type amorphous silicon film. A method of manufacturing the device includes: integrally forming an oxide electrode layer on the n-type amorphous silicon film and the p-type amorphous silicon film; and applying plasma, under a condition that a mask is disposed on the transparent conductive film covering either the n-type amorphous silicon film or the p-type amorphous silicon film, to exposed portions of transparent conductive film.

主权项

1. A method of manufacturing a photovoltaic element, comprising:
a step of forming an n-type semiconductor layer on a first region of a face of a semiconductor crystal substrate; a step of forming a p-type semiconductor layer on a second region of the face; a step of integrally forming a contact electrode layer, whose chief element is oxide, on the face, and surfaces of the n-type semiconductor layer and the p-type semiconductor layer; a step of adjusting a carrier density of the contact electrode layer above either the first region or the second region so that a carrier density of the contact electrode layer above the first region becomes larger than a carrier density of the contact electrode layer above the second region; and a step of cutting the contact electrode layer to separate the contact electrode layer above the first region and the contact electrode layer above the second region.