| 发明名称 |
HIGHHSENSITIVE POSITIVE TYPE ELECTRON BEAM FORMATION |
| 摘要 |
PURPOSE:To obtain highly sensitive positive-type electron-beam-sensitive conposition by including the polymer containing the prescribed repeated units. |
| 申请公布号 |
JPS52132678(A) |
申请公布日期 |
1977.11.07 |
| 申请号 |
JP19760049193 |
申请日期 |
1976.04.28 |
| 申请人 |
FUJITSU LTD;MITSUBISHI CHEM IND |
发明人 |
KAWASHIMA KENICHI;SATOU JIYUNJI;MIURA KONOE;EGUCHI CHIHIRO |
| 分类号 |
G03F7/004;C08F20/00;C08F22/32;C08L31/00;C08L33/00;C08L33/02;C08L33/18;G03F7/039;H01L21/027;H01L21/302 |
主分类号 |
G03F7/004 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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