Composite group III-V and group IV transistor having a switched substrate

摘要

There are disclosed herein various implementations of a group III-V composite transistor having a switched substrate. Such a group III-V composite transistor includes a composite field-effect transistor (FET) including a depletion mode group III-V high electron mobility transistor (HEMT) situated over a substrate. The depletion mode group III-V HEMT is cascoded with an enhancement mode group IV FET to produce the composite FET. The group III-V composite transistor also includes a transistor configured to selectably couple the substrate of the depletion mode group III-V HEMT to ground and to selectably decouple the substrate from ground. That transistor is configured to ground the substrate when the depletion mode group III-V HEMT is in an off-state and to cause the substrate to float when the depletion mode group III-V HEMT is in an on-state.

主权项

1. A group III-V composite transistor comprising:
a composite field-effect transistor (FET) including a depletion mode group III-V high electron mobility transistor (HEMT) situated over a substrate; said depletion mode group III-V HEMT being cascoded with an enhancement mode group IV FET to produce said composite FET; a transistor configured to selectably couple said substrate of said depletion mode group III-V HEMT to ground and to selectably decouple said substrate from ground, a source of said transistor being directly connected to a gate of said depletion mode group III-V HEMT; said transistor configured to ground said substrate when said depletion mode group HEMT is in an off-state and to cause said substrate to float when said depletion mode group III-V HEMT is in an on-state.