Electronic device including a semiconductor memory that includes resistance variable layers disposed between an odd-numbered structure and an even-numbered structure, and method for fabricating the same

摘要

An electronic device includes a semiconductor memory. The semiconductor memory includes an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction; an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; and resistance variable layers interposed between the first lines, between the second lines, and between the first lines and the second lines, wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate.

主权项

1. An electronic device comprising:
a semiconductor memory, wherein the semiconductor memory comprises:
an odd-numbered layer structure disposed over a substrate and including a plurality of first lines which extend in a first direction;an even-numbered layer structure disposed over the substrate and including a plurality of second lines which extend in a second direction crossing the first direction; andresistance variable layers interposed between the first lines to be in contact with the first lines, between the second lines to be in contact with the second lines, and between the first lines and the second lines to be in contact with both the first lines and the second lines,wherein the odd-numbered layer structure and the even-numbered layer structure are alternately stacked over the substrate.