| 发明名称 |
Method for fabricating image sensor device |
| 摘要 |
An image sensor device includes a silicon-based substrate, a silicon-germanium epitaxy layer, an isolation feature, an active pixel cell and a logic circuit. The silicon-germanium epitaxy layer is on the silicon-based substrate, in which the silicon-germanium epitaxy layer has a composition of Si1-xGex, where 0<x<1. The isolation feature is disposed in the silicon-germanium epitaxy layer to define a pixel region and a periphery region of the silicon-germanium epitaxy layer. The active pixel cell is disposed in the pixel region of the silicon-germanium epitaxy layer. The logic circuit is disposed in the periphery region. |
| 申请公布号 |
US9502463(B2) |
申请公布日期 |
2016.11.22 |
| 申请号 |
US201615153615 |
申请日期 |
2016.05.12 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Lee Yueh-Chuan |
| 分类号 |
H01L27/146;H01L31/18 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
Brennan Maschoff |
| 主权项 |
1. A method for fabricating an image sensor device, the method comprising:
providing a silicon-based substrate, wherein the silicon-based substrate has a top surface and a bottom surface opposite to the top surface of the silicon-based substrate; forming a silicon-germanium epitaxy layer on the silicon-based substrate and connected to the top surface of the silicon-based substrate, wherein the silicon-germanium epitaxy layer has a top surface and a bottom surface opposite to the top surface of the silicon-germanium epitaxy layer, the silicon-germanium epitaxy layer is formed from Si1-xGex, where 0<x<1, and x is constant from the bottom surface of the silicon-germanium epitaxy layer to the top surface of the silicon-germanium epitaxy layer, wherein the silicon-based substrate is formed from silicon or Si1-yGey, where 0<y<x, and y is constant or is increasing from the bottom surface of the silicon-based substrate to the top surface of the silicon-based substrate; forming an isolation feature in the silicon-germanium epitaxy layer and between a pixel region and a periphery region of the silicon-germanium epitaxy layer, wherein the isolation feature extends from the silicon-based substrate to the top surface of the silicon-germanium epitaxy layer; and forming an active pixel cell and a logic circuit in the pixel region and in the periphery region of the silicon-germanium epitaxy layer respectively. |
| 地址 |
Hsinchu TW |
