Retention logic for non-volatile memory

摘要

An integrated circuit memory device includes an array of non-volatile, charge trapping memory cells, configured to store data values in memory cells in the array using threshold states, including a higher threshold state. Retention check logic executes to identify memory cells in the higher threshold state which fail a threshold retention check. Also, logic is provided to reprogram the identified memory cells.

主权项

1. A memory device, comprising:
an array of memory cells, configured to store data values in memory cells in the array using threshold states, including a higher threshold state; and a controller including retention check logic to identify memory cells in the higher threshold state having threshold voltages which fail a retention threshold check, and including logic to execute, responsive to the memory device entering any of a read mode and a write mode, a retention write on the identified memory cells in the higher threshold state.