| 摘要 |
A CMOS anti-fuse cell is disclosed. In one aspect, an apparatus includes an N- well and an anti-fuse cell formed on the N- well. The anti-fuse cell includes a drain P+ diffusion deposited in the N- well, a source P+ diffusion deposited in the N- well, and an oxide layer deposited on the N- well and having an overlapping region that overlaps the drain P+ diffusion. A control gate is deposited on the oxide layer. A data bit of the anti-fuse cell is programmed when a voltage difference between the control gate and the drain P+ diffusion exceeds a voltage threshold of the oxide layer and forms a leakage path from the control gate to the drain P+ diffusion. The leakage path is confined to occur in the overlapping region. |
