SEMICONDUCTOR MEMORY DEVICE WITH SUBSTRATE VOLTAGE BIASING,申请号IE19810000295-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	SEMICONDUCTOR MEMORY DEVICE WITH SUBSTRATE VOLTAGE BIASING
摘要
申请公布号	IE810295(L)	申请公布日期	1981.08.16
申请号	IE19810000295	申请日期	1981.02.13
申请人	FUJITSU LTD	发明人
分类号	G11C11/417;G05F3/20;G11C7/00;G11C11/4074;G11C11/408;G11C11/409;G11C11/4091;H01L21/822;H01L27/04;H03K19/003;(IPC1-7):G11C11/24	主分类号	G11C11/417
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Micro-mechanically strained semiconductor film

Substrate polishing apparatus

Solid-state gyroscopes and planar three-axis inertial measurement unit

Self contained transport for crop harvesting header

System, method and terminal for acquiring content information for printing

Variable lightwave functional circuit and variable lightwave functional apparatus

Overexpression of aminoacyl-tRNA synthetases for efficient production of engineered proteins containing amino acid analogues

System and method for run-time data reduction

Arrangement for determining a temperature loading of an integrated circuit and method

Method, system, and storage medium for integrating rework operations into an advanced planning process

Method for monitoring and analyzing a process

Switch level reliable transmission

Apparatus and method for heating and transferring a workpiece prior to forming

Ion-generating component, ion-generating unit, and ion-generating apparatus

Corona discharge lamps

Process for passivating polysilicon and process for fabricating polysilicon thin film transistor

Thermal interface adapter plate conversion kit and method