| 摘要 |
PURPOSE:To enable the etching of only a film of amorphous hydrogenated silicon without damaging a glass or the like used as a substrate by dry etching the film in a mixture gas of tetrafluorocarbon and hydrogen gas when the film is dry etched. CONSTITUTION:An anode electrode 12 and a water-cooled cathode electrode 13 are faced while enabling the adjustment of the interval between the electrodes 12 and 13 within a dry etching chamber 11, and an annular gas guide tube 16 provided with many gas flowing holes toward the inside is provided therebetween. The arrangement is thus composed, a target 14, e.g., a glass plate or the like having amorphous hydrogenated silicon on the surface is placed on the electrode 13, and tetrafluoro-carbon gas containing 2-40vol% of hydrogen gas is fed from the inlet of the tube 16. Subsequently, the mixture gas is sprayed from the gas flow hole of the tube 16 to the exposed region of the amorphous hydrogenated silicon coating with resist pattern to etch it as desired, and the gas is discharged from the discharge tube 15. |
