| 摘要 |
PURPOSE:To facilitate the division of a chip in a large diameter wafer and the electric measurement by mechanically grinding the back surface of the wafer after the machining process of the wafer, and making the thickness thin evenly. CONSTITUTION:The machining for forming a diffused layer 4 and the like on the surface is performed and a diffused layer 5 and the like are formed on the back surface. An electrode wiring 6 is provided on an element region. For example, the surface of the 5 inch wafer having a thickness of 600mum is bonded to a fixed table 7 via a protecting film 8. Then, e.g., the wafer is ground to the thickness of about 200-300mum by using a diamond grinder 9. Thereafter the processes of the evaluation of electric characteristics and the division into the chips are performed. In this method, the characteristics can be measured regardless of the effects of the state of the back surface, the thickness can be reduced at the accuracy of about + or -10mum, and the division can be readily performed. |
