| 摘要 |
PURPOSE:To reduce the temperature dependency of a temperature compensating semiconductor device, by providing a Zener diode and forward diode respectively on the surface of a single semiconductor chip and the back surface thereof. CONSTITUTION:B is diffused on an N type Si substrate 1 to form the P type region 2 of a Zener diode and giard ring 3 with the P type region 4 of a temperature compensating diode and the P type region 5 for temperature coefficient adjustment formed on the other surface. An Ag electrode 6 is provided on each of P type regions 2, 4 with the parallel connection of the P type region 5 for adjustment of required area. Thus, accurate adjustment for the purposed temperature coefficient is available to a semiconductor wafer after finishing the diffusion process to obtain a constant voltage diode with less temperature dependency. |
